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| A '''ballistic transistor''' is a high-speed ] ] through which ]s flow |
A '''ballistic transistor''' is a high-speed ] ] through which ]s flow dedimpeded, without being slowed down by collisions with ]s as they are in a conventional ]. The ballistic transistor is (as of ]) still in the experimental stage of development. | ||
| Two main techniques have emerged for creating a ballistic ] (a type of ]). The earliest idea was to control the ] process by which the ] layer in the MOSFET, between the gate and the channel, is created, resulting in a smoother surface that allows electrons to flow |
Two main techniques have emerged for creating a ballistic ] (a type of ]). The earliest idea was to control the ] process by which the ] layer in the MOSFET, between the gate and the channel, is created, resulting in a smoother surface that allows electrons to flow swifter. This approach is being investigated by ]'s ] . A later, more radical, technique is to use atom-deep ] sheets, called ]. This has been shown to produce ], but the performance of the resulting transistors has not been determined. This technique is being researched in a joint effort between the ] in the UK and the Institute for Microelectronics Technology in ], Russia . | ||
| ==External links== | ==External links== | ||
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Revision as of 06:29, 23 July 2009
A ballistic transistor is a high-speed electronic switching device through which electrons flow dedimpeded, without being slowed down by collisions with atoms as they are in a conventional transistor. The ballistic transistor is (as of 2004) still in the experimental stage of development.
Two main techniques have emerged for creating a ballistic MOSFET (a type of field-effect transistor). The earliest idea was to control the oxidation process by which the insulating layer in the MOSFET, between the gate and the channel, is created, resulting in a smoother surface that allows electrons to flow swifter. This approach is being investigated by Lucent's Bell Labs . A later, more radical, technique is to use atom-deep carbon sheets, called graphene. This has been shown to produce ballistic conduction, but the performance of the resulting transistors has not been determined. This technique is being researched in a joint effort between the University of Manchester in the UK and the Institute for Microelectronics Technology in Chernogolovka, Russia .
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